Growth of synthetic diamond films and their electrophysical properties

Abstract

The possibilities of formation of single-crystal homoepitaxial diamond structures grown by the method of vapor-phase chemical deposition are investigated. Optimal technological conditions for the formation of structures are suggested. The layer with p-type conductivity formation process depending on the temperature and time is determined. It was shown that applied thermal treatment method in hydrogen can be an alternative to the conventional method of H layer formation in microwave hydrogen plasma due to simpler and more reproducible. The profile distribution of boron atoms in a diamond crystal was determined under different implantation modes. The temperature dependence of specific conductivity in the temperature range 80–700 K was studied, and the activation energy was calculated. The results of Hall measurements of the electrophysical parameters of implanted samples are presented, and the effect of nitrogen concentration on the electrophysical parameters is revealed. The electrophysical parameters of the structures obtained under various modes of ion implantation of boron in a crystal and subsequent annealing are presented. The possibility of creating a field effect transistor on a hydrogenated diamond surface is shown. The current-voltage characteristic of the manufactured sample was studied and it was shown that it demonstrates low leakage through the gate.