Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

Abstract

Multilayer AlGaN/GaN epitaxial structures were grown on SiC by HVPE method. Characterization of the grown structures was performed using SEM, SIMS, mercury probe, electroluminescence and photoluminescence techniques. Thicknesses of nitride layers in nanometer range were achieved. Stimulated emission from double confined heterostructure grown by HVPE was detected at room temperature under optical pumping. Short wave UV electroluminescence (λ max 340-350 nm) was measured for p-AlGaN/n-AlGaN structures having up to 38 mol% and 9 mol% of AIN in p-AlGaN carrier emitter layers and n-AlGaN light emitting layers, respectively.