Abstract
A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
