Abstract
We investigated the growth of GaAsSb layers and quantum wells (QW) on GaAs (0 0 1) by MOVPE. Sb concentrations up to 12% were achieved at low arsine partial pressure and low growth temperature. Varying the tri-methyl antimony pressure primarily changed the growth rate but not the Sb incorporation. The in situ reflectance anisotropy spectrum during growth resembles that of a GaSb surface. Sb has a strong tendency towards segregation and is only incorporated after reaching a certain critical surface coverage. These findings can be explained by a very mobile and highly Sb enriched surface layer which forms by surface melting due to strain.
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