Abstract
Abstract The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs 1− y − z Sb y N z /InP multi-quantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs 1− y Sb y layers was observed when using a higher Sb/(As+Sb) precursor ratio and higher growth temperature. However, lattice-latching effects and the strain values ultimately limit the maximum amount of Sb incorporated. In GaAs 1− y − z Sb y N z layers, a decrease of AsH 3 precursor flux leads to an increase of N and Sb incorporation, whereas an increase of unsymmetrical dimethylhydrazine (U-DMHy) precursor flux leads to an increase of N and a decrease of Sb incorporation. The photoluminescence emission from the GaAs 1− y − z Sb y N z QW is observed to red-shift with decreasing AsH 3 and increasing U-DMHy flux. Sb accumulation at the InP to GaAs 1− y − z Sb y N z interface is also observed from secondary ion mass spectroscopy analysis, indicating further optimization of switching sequences is required to improve the compositional uniformity of the QW.
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