Abstract
We studied the growth of strain relaxed Si 1− y C y films on Si(001) substrates. The critical thickness of Si 1− y C y on Si was calculated using People's equation. The strain relaxed Si 1− y C y films on Si substrates were grown by gas source MBE (GS-MBE) and it was found from cross sectional TEM analysis that the use of Si buffer layers was very important in order to obtain high quality Si 1− y C y films. Lattice relaxation was clearly observed when the thickness of the Si 1− y C y layers exceeded their critical thickness. The relaxation ratio of Si 1− y C y films with a carbon concentration of 1.0% was 40% in the vertical direction when the film thickness was 1800 nm.
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