Abstract
We present a method to grow stoichiometric SiO2 films of only ∼0.6–0.9nm in thickness on a metal substrate. Based on photoelectron and infrared spectroscopy studies, we conclude that the ∼0.6-nm-thick silica films exhibit characteristics only observed for >2.0-nm-thick films grown on conventional Si substrates. The films can be used as model oxides for fundamental studies and may have implications on the further miniaturization of metal-oxide-semiconductor transistors.
Published Version
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