Abstract
Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.
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