Growth of Sr2FeMoO6 Based Tri-layer Structure for Room Temperature Magnetoresistive Applications

Abstract

Tunnel magnetoresistance in Sr2FeMoO6 based tri-layered structure was studied at room temperature. The Sr2FeMoO6/SrTiO3/Sr2FeMoO6 tri-layered structure was grown by pulse laser deposition on STO buffered Si(100) substrate. The X-ray diffraction and Micro Raman studies confirm the polycrystalline phase formation of SFMO thin films without any impurity phases. The single layer SFMO thin film shows the good ferromagnetic behavior with saturation magnetization of ∼1.48 μB/ f.u. at room temperature. The high value of tunneling magnetoresistance of ∼7% of tri-layer structure at room temperature was attributed to spin dependent tunneling through uniform STO barrier layer. The room temperature tunneling magnetoresistance in SFMO tri-layer structure open the future prospect for their possible integration to room temperature spintronic devices.