Abstract
In this research, the effect of precursor concentration of CuI thin film deposited by spraying technique was studied. The CuI concentration varies from 0.05M to 0.5M. The CuI solution was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The deposition takes 15 min for 50ml at a constant temperature of 50°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. The Urbach energy as calculated from transmittance spectra increased up to 0.1M. The electrical properties indicates the decreased of conductivity as the concentration increased.
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