Abstract
Binuclear complex Et2In(S2CNEt2)·ZnEt(S2CNEt2) was prepared by the reaction of indium triethyl (InEt3) with zinc bis(diethyldithiocarbamate) (Zn(S2CNEt2)2). This complex was an excellent single-source precursor for low-pressure MOCVD growth of spinel ZnIn2S4 thin layers. Optimal growth conditions for strongly 〈111〉 oriented spinel ZnIn2S4 thin film were as follows: substrate temperature Tsub, 400°C; source temperature Tso, 60°C; carrier gas N2; carrier flow rate Rflow (total pressure 1.3 kPa), 0.3 l/min. The spinel ZnIn2S4 thin film grown on an Si(111) substrate showed an n-type conduction nature and excellent semiconductor properties, such as optical bandgap energy (Eg)opt, 2.72 eV, mobility μ, 25.4 cm2/Vs, and carrier concentration N, 3.7×1016 cm−3.
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