Abstract
Well-aligned AlZnO nanorod arrays with various Al concentrations and various diameters were prepared on silicon substrate by a simple vapor deposition with separate sources at different temperatures. Field emission scanning electron microscope (FESEM) and transmission electron microscopy (TEM) were carried out to characterize morphology and microstructure. X-ray fluorescence shows that the atomic ratio of Al/(Al + Zn) of the arrays is determined to be about 3% and 1.6%, respectively. The Burstein–Moss (BM) shift of the strong ultraviolet emission is observed due to Al incorporation.
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