Abstract

A new method for preparing single crystals of refractory oxides by the direct transport of material across the gap of a d.c. arc has recently been described by Drabble and Palmer. We report here observations on the growth characteristics of NiO, CoO, Fe 3 O 4 and Mn 3 O 4 crystals and other oxides by this method including the influence of the ambient atmosphere and Li doping. CoO and Fe 3 O 4 have been examined in detail in an attempt to understand the growth process. The transfer mechanism remains obscure, but over a limited range of arc-currents the variation of ingot diameter can be explained by assuming that the heat losses are radiation limited. The linear growth rates are generally small (≁ 4 mm/hour) and independent of current over most of the lower range. Some practical difficulties and limitations of the method are also discussed.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call