Abstract
A method is described in which CdS crystals can be grown in controlled atmospheres of the constituent elements. The growth rate and growth direction are strongly influenced by the atmosphere, as is the incidence of macroscopic voids and internal strain in the crystals. These and other problems are discussed. The photoconductive and luminescent properties of the crystals are described briefly. It is shown that although growth in high partial pressures of sulphur introduces numerous acceptor levels ∼0.16 eV above the valence band, they are automatically compensated by the introduction of an equivalent concentration of shallow donors.
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