Abstract
A method is described in which CdS crystals can be grown in controlled atmospheres of the constituent elements. The growth rate and growth direction are strongly influenced by the atmosphere, as is the incidence of macroscopic voids and internal strain in the crystals. These and other problems are discussed. The photoconductive and luminescent properties of the crystals are described briefly. It is shown that although growth in high partial pressures of sulphur introduces numerous acceptor levels ∼0.16 eV above the valence band, they are automatically compensated by the introduction of an equivalent concentration of shallow donors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
