Abstract
High speed growth of cubic-In 2 O 3 by halide vapor phase epitaxy was investigated on c-plane sapphire substrates with various off-axis angles. The growth rate was found to increase with increase of the off-axis angle. In addition, it was found that (111) oriented single crystal layers could be grown when off-axis angle of the substrate was at and above 5°, while polycrystalline layers with mixed domains of {100} and {111} were grown when off-axis angle was less than 5°. A smooth layer showing n-type electron concentration and mobility of $5.4\times 10^{16}\mathbf{cm}^{-3}$ and 177 cm2V−1/s−1 at room temperature was obtained on the sapphire substrate with off-axis angle of 5°.
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