Abstract
We grew a single-crystal SiO2 film on a Ni(111) surface. Atomic hydrogen during initial growth of an amorphous SiO2 film and an ambient oxygen atmosphere during annealing of this film were essential in forming this single-crystal SiO2 film. The film grew with a (√3×√3) R30° crystallographic orientation, and its structure was the high-temperature phase of quartz, i.e., β quartz. In addition, a polycrystalline silicide phase was formed at the SiO2/Ni(111) interface.
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