Growth of single crystal Sb2S3 semiconductor pillars by sol-gel method

Abstract

The binary compound semiconductor Sb2S3 was fabricated on solid substrate by spin coating based on a sol-gel method. In this study, it was observed that crystallinity appeared differently depending on the type of substrate material used to fabricate the Sb2S3 structure, and this mechanism was investigated. As the substrate, bare FTO glass and FTO glass coated with Mo, Ni, and Au were used. In the case of Sb2S3 grown on bare FTO glass and FTO glass coated with Mo, crystals are formed in-plane, whereas in the case of Sb2S3 grown on FTO glass substrate coated with FCC-structured metals such as Au and Ni, crystals are formed out-of-plane. It was observed that the single crystal growth of rectangular pillar-shaped Sb2S3 was closely related to the formation of regularly ordered compounds at the interface between the Sb2S3 pillar and the FCC metal substrate.