Abstract
Silicon nanowires (Si NWs) were fabricated on Si (111) surfaces using both magnetron sputtering and thermal evaporation methods. Au thin layers were deposited using the electron-beam (e-beam) evaporation method and used as metal catalysts. The Au particles were formed by annealing at high temperature; their dimensions depended on the Au layer thickness and affected the formation and dimension of Si NWs. Field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. Photoluminescence (PL) measurement was conducted to demonstrate the quantum confinement effect of the Si NWs.
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