Abstract
The two-dimensional (2D) growth of cubic-structured (silicon) Si nanosheets (SiNSs) was investigated. Freestanding, single-crystalline SiNSs with a thickness of 5–20 nm were grown on various Si substrates under an atmospheric chemical vapor deposition process. Systematic investigation indicated that a diffusion-limited aggregation (DLA) environment that leads to dendritic growth in <110> directions at the initial stage is essential for 2D growth. The kinetic aspects under DLA environments that ascribe to the dendritic and 2D growth were discussed. Under the more dilute conditions made by addition of Ar to the flow of H2, the SiNSs grew epitaxially on the substrates with periodic arrangement at a specific angle depending on the orientation of the substrate. It reveals that SiNSs always grew two dimensionally with exposing (111) surfaces. That is thermodynamically favorable.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-1138-2) contains supplementary material, which is available to authorized users.
Highlights
Two-dimensional (2D) nanomaterials, such as graphene and transition metal dichalcogenides (TMDs), have been intensively researched because of their excellent physical and chemical properties [1]
In our atmospheric chemical vapor deposition (CVD) system, SiCl4 was bubbled with H2 at 2–20 sccm and the H2 carrier gas was flowed at 1000–3000 sccm
Single-crystal SiNSs were grown on the substrates using a CVD process under the diffusion-limited aggregation (DLA) environments made by a high flow rate of H2 and/or Ar gas
Summary
Two-dimensional (2D) nanomaterials, such as graphene and transition metal dichalcogenides (TMDs), have been intensively researched because of their excellent physical and chemical properties [1]. Graphene is characterized by an excellent Young’s modulus, high thermal conductivity, and high electron mobility. Monolayers of TMDs exhibit direct band gap transitions that result in field-effect transistor (FET) devices with high on/off ratios [2]. Other applications for graphene and TMDs have been investigated, including flexible and transparent devices, high-speed transistors, optical devices, sensors, and energy-harvesting devices. These 2D nanomaterials are not compatible with current silicon (Si)-based complementary metal oxide semiconductor (CMOS) processes, which are critical for the fabrication of devices. The large-scale synthesis, large domain size, surface residue, doping, and air stability of these 2D nanomaterials should be addressed to exploit their potential
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