Abstract
Silicon nanocrystals on a thermally grown silicon oxide have been fabricated at a low temperature using the photo chemical vapor deposition (photo-CVD). Even at a low temperature of 150°C, crystalline silicon nanocrystals are successively formed by this method. By changing the gas mixture of SiH4 and H2, the size and number density of Si nanocrystals are systematically investigated in a controlled manner. The shape, size, and crystallinity of such nanocrystals examined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). To apply Si nanocrystals in nonvolatile memory, the capacitance–voltage (CV) characteristics of Si nanocrystals are also discussed in this paper.
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