Abstract
Silicon homoepitaxial films have been grown by ion beam sputter deposition using an ultrahigh vacuum (UHV) apparatus with in situ diagnostic equipment. The deposition conditions are characterized and the beginning of single crystal growth occurs at 250 °C. Films of high crystalline and morphological quality are obtained at deposition temperatures above 700 °C, where good doping element transfer efficiency from the target to the film is observed. Room temperature bulk mobility is found for film thicknesses as low as 0.5 μm and deposition temperatures near 700 °C.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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