Abstract
Heteroepitaxy techniques for the growth of group IV binary alloys, in particular, SiGe, SiC, GeC and SiSn films are reviewed. Deposition of heteroepitaxial films using various reactors like molecular beam epitaxy, gas source molecular beam epitaxy, and different chemical vapour deposition techniques are compared. Issues related to heteroepitaxial film deposition, such as critical layer thickness are examined. Growth of strained silicon on relaxed SiGe buffer layers, poly-SiGe film and hydrogenated amorphous SiGe (a-SiGe:H) film is also reviewed
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