Abstract
A novel method to synthesize SiC whiskers by heating Fe x Si y (FeSi, FeSi 2 and Fe 5Si 3) in graphite crucible without using catalyst is presented. The SiC whiskers grew on the inner wall of the crucible above the top level of melted FeSi and FeSi 2 (not for Fe 5Si 3) after heating at 1600 °C for 3 h under stationary argon of 0.11 MPa and fast cooling. The formation of SiC whiskers is attributed to the reaction of Si in FeSi and FeSi 2 melt films wetting and spreading on the inner wall of the crucible with C dissolved from the graphite crucible (LS process). Besides SiC whiskers, Fe 5Si 3 was also found in the final product in FeSi 2–C system, based on which a reaction equation is assumed and no whiskers formation in Fe 5Si 3–C system is explained. The explanation takes into consideration the carbon solubility in Fe x Si y melts, and high carbon solubility in Fe 5Si 3 melt is believed the reason why SiC whiskers did not come up in Fe 5Si 3–C system.
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