Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH 4/CH 4/H 2

Abstract

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH 4/CH 4/H 2 and their structural properties were investigated by X-ray diffraction, Fourier transform infrared absorption and Raman scattering spectroscopies. At 2 Torr, Si-crystallite-embedded amorphous SiC (a-Si 1 − x C x :H) grew at filament temperatures ( T f) below 1600 °C and nanocrystalline cubic SiC (nc-3C-SiC:H) grew above T f = 1700 °C. On the other hand, At 4 Torr, a-Si 1 − x C x :H grew at T f = 1400 °C and nc-3C-SiC grew above T f = 1600 °C. When the intakes of Si and C atoms into the film per unit time are almost the same and H radicals with a high density are generated, which takes place at high T f , nc-3C-SiC grows. On the other hand, at low T f the intake of Si atoms is larger than that of C atoms and, consequently, Si-rich a-Si 1 − x C x :H or Si-crystallite-embedded a-Si 1 − x C x :H grow.