Growth of silicon carbide films via C 60 precursors

Abstract

Epitaxial silicon carbide films are grown on Si(100) and Si(111) substrates at surface temperatures between 950 and 1250 K via c 60 precursors. Films have been grown up to thicknesses greater than 1 μm. The growth rate of the SiC film is not limited by the surface reaction rate of C 60 with silicon at these temperatures, rather by the arrival rate of the reactants Si (by diffusion) or C 60. This results in rapid film growth. Films have been characterized by low energy electron diffraction, X-ray diffraction, and Auger depth profiling. X-ray diffraction suggests the growth of β-SiC in the temperature range investigated. Auger depth profiling shows the film is stoichiometric. Selective crystalline silicon carbide growth is achieved on patterned silicon-silicon oxide samples.