Abstract
We have successfully grown Si 0.3Ge 0.7/strained Ge channel/Si 0.3Ge 0.7 heterostructures with ultrahigh hole mobility on Si (1 0 0) substrates by solid source molecular beam epitaxy. Suppression of parallel conduction, which commonly exists in SiGe heterostructures was achieved by employing n-type doping in thick SiGe buffer layers, which resulted in the drastic increase of room-temperature (RT) Hall hole mobility up to 2100 cm 2/V s. Using this technique, p-type metal-oxide-semiconductor field-effect transistors without parallel conduction were successfully fabricated and the peak effective hole mobility of 2700 cm 2/V s at RT was obtained, which was much higher than that of bulk Ge drift mobility.
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