Abstract
Ultra-high-vacuum chemical vapor deposition (UHV/CVD) system displays excellent performance for the growth of high-quality SiGe film. Investigations have shown that have shown that SiGe film grown by this system has high quality. A 10-finger SiGe hetero-junction bipolar transistor (HBT) device displayed good electrical performance. The current gain was about 500, and the fT was 5.4 GHz with fmax 7.5 GHz under VCB=3 V, IC=10 mA.
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