Growth of SiC Nanowires from NiSi Solution

Abstract

We present a simple melt solution strategy for the growth of high-yield SiC nanowires out of NiSi solution. The growth temperature and base vacuum before filling argon during the reaction are found to have a significant effect on the morphology of the product growth. Taking into consideration the action of Ni in the NiSi melt and the possible participation of a tiny amount of oxygen, the formation of SiC nanowires is discussed by a combination of the solid−liquid−solid reaction for nucleation and the vapor−liquid−solid process for nanowire growth. The nanowires were also investigated with Raman spectroscopy. Such a simple and economical method may be extended to synthesize other one-dimensional nanostructures.