Growth of Si wires on a Si(111) substrate under ultrahigh vacuum condition

Abstract

The Si wires were grown on a Si(111) substrate using the pulsed laser deposition system. Gold was used as a metal catalyst to form the silicon wires utilizing the vapor-liquid-solid growth mechanism. Samples were grown under ultrahigh vacuum conditions at a growth temperature of 800 °C. Typical dimensions of the grown Si wires were 200–500 nm in diameter and 1.6 μm in height.