Growth of Si on Si(111) [formula omitted]-In surfaces studied by UHV-REM

Abstract

Growth of Si on Si(111) 3 × 3 -In surfaces was studied by reflection electron microscopy and reflection high energy electron diffraction (REM-RHEED). During Si deposition at temperatures between 300 and 500°C RHEED patterns did not change and reflections from the 3 × 3 structure were seen. This indicated that In atoms segregated to the topmost surface during the deposition. Changes of REM images which corresponded to a RHEED intensity oscillation were observed. It was noticed that two-dimensional nucleation of Si on In-adsorbed surface terraces was suppressed.