Abstract
The use of electron beams for melting and recrystallizing polycrystalline silicon layers in silicon-on-insulator structures is described. The formation of single crystal Si films with low angle grain boundaries or of large parallel grains has been achieved, similar to results for other beam and radiant heat source techniques. However, the electron beam approach has been much less thoroughly investigated than other heating sources. The advantages and disadvantages of electron beams, relative to other heat sources, are discussed, as well as the current state of application.
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