Abstract

The issues involved in the growth of strained InGaAs/GaAs quantum well lasers integrated with AlAs/GaAs Bragg reflectors on nonplanar substrates is treated in this work. Under optimized conditions, controlled growth of uniform small area Bragg reflectors integrated with low threshold lasers has been achieved. An average pulsed threshold current of 2.9 mA/μm for edge emitting lasers at 0.98 μm with 90% external efficiency was obtained showing the potential for the use of this structures as 45° folded cavity surface emitting lasers.

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