Abstract
Semi-insulating Fe-doped InGaAsP alloys of λ = 1.0, 1.15, 1.35 and 1.55 μm wavelength compositions lattice matched to InP have been grown and characterized for the first time. The resistivity is maximum for λ = 1.0 μm InGaAsP at a value of 1×10 8 ω cm, and decreases exponentially with the arsenic mole fraction for the longer wavelength alloys. The solubility of Fe in the InGaAsP is fixed at the InP solubility value of 5×10 16 cm −3 at 630°C until phosphorus is eliminated from the alloy lattice. Diffusion of Fe in InGaAsP is noted, where the diffusion tendency increases with the arsenic mole fraction. Limiting the total Fe concentration to the solubility limit of Fe in InGaAsP greatly reduces diffusion of Fe.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
