Abstract
Hexanethiol (C6H13SH), phenylphosphonic acid [PhP(O)(OH)2], and 3-bromo-benzoic acid (3-BrC6H4CO2H) have been reacted with {100}-GaAs surface which have been pretreated with an acid etch and an ammonium sulfide reactive passivation layer. The chemically reacted surfaces have been characterized by XPS and advancing contact angle measurements. As predicted from simple model compounds, [(tBu)2Ga(μ-X)]2, the thiol and phosphonic acid ligands allow for uniform surface layers, while the carboxylic acid is geometrically unsuited to binding the surface of GaAs. The relative acidity of thiol versus phosphonic acid results in greater coverage for the latter due to a more facile reaction with the sulfide passivated GaAs surface.
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