Abstract
This work presents a systematic growth study of self-assembled and position-controlled InN nanowires (NWs) on Si (111) substrates by plasma-assisted molecular beam epitaxy without using a buffer layer. By variation of the substrate temperature, the III/V flux ratio, and the growth time, optimal parameters for self-assembled and position-controlled NW growth are found and compared. This leads to a fundamental understanding of the underlying growth mechanism for InN NW formation. Scanning transmission electron microscopy measurements of a self-assembled InN NW show a wurtzite crystal structure with a hexagonal cross-section and flat lateral facets covered by an approximately 5 nm thick indium oxide shell. In addition, Kelvin probe force microscopy measurements indicate the existence of both lattice polarities in case of self-assembled InN NWs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
