Abstract
We have prepared RuO 2 layers by metal organic chemical vapour deposition using liquid delivery source and by thermal evaporation of powder precursors. The films were prepared on silicon and r-plane cut sapphire substrates. We discuss thermodynamics of both types of MOCVD techniques. Liquid delivery source technique using diglyme solvent results in deposition of metallic Ru film with some traces of RuO 2 , while films prepared by thermal evaporation of powder precursors consist of pure RuO 2 phase. Thermal evaporation MOCVD grown RuO 2 films exhibit excellent electrical properties; room temperature resistivity of 30 μΩcm and residual resistivity ratio between 8 and 30.
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