Growth of ${\rm MgB}_{2}$ Thin Films In Situ by RF Magnetron Sputtering With a Pocket Heater

Sanghan Lee Sanghan Lee,Xiaoxing Xi Xiaoxing Xi,M.S Rzchowski,B.H Moeckly,Ke Chen Ke Chen,Seung Hyup Baek Seung Hyup Baek,Qi Li Qi Li,C.B Eom,Wenqing Dai Wenqing Dai

doi:10.1109/tasc.2009.2018812

Abstract

We have grown MgB 2 thin films using RF magnetron sputtering combined with a pocket heater. This technique relies on a low-pressure environment for sputter deposition of boron and a high-pressure environment for thermal evaporation of Mg. We have obtained superconducting MgB 2 thin films using substrate temperatures of 480-540degC and Mg furnace temperatures of 730-750degC. The T c onset of the thin films increased from 21.6 K to 35 K with increasing substrate temperature due to better crystallization. Higher boron deposition rates also increase T c . The highest J c of the films at 5 K and near zero magnetic field is 1.5 MA/cm 2 which is comparatively lower than the films grown using a pocket heater with boron deposition by chemical vapor deposition or electron beam evaporation. The chemical composition analysis by WDS exhibits a high concentration of oxygen and carbon in the MgB 2 films, which is due to a high background base pressure and an impure B sputtering target. These results suggest that the T c , J c , and resistivity of MgB 2 films are mainly determined by an inhomogeneous microstructure and superconducting percolation paths through impurity phases such as MgO. By comparison with carbon or oxygen doped films, the high impurity content in the sputtered MgB 2 films might act as method to achieve high H c2 .

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