Growth of Quaternary GaxCe1-xOyNz passivation layer for silicon based metal-oxide-semiconductor capacitor

Abstract

Quaternary GaxCe1-xOyNz passivation layer was successfully grown on silicon substrate after annealing in nitrogen-oxygen-nitrogen (NON) ambient at 800 °C. The employment of NON ambient has managed to impede the diffusion of oxygen ions to the interface, and thus suppressing the formation of interfacial layer (IL), which eventually led to the acquisition of k value of 8.7. Furthermore, an improvement in interface quality was perceived as a lower interface trap density (Dit; 2.9 x 1012 eV−1 cm−2) was attained by this GaxCe1-xOyNz layer when compared with previously reported CeO2 layer (4.0 x 1012 eV−1 cm−2). Detailed investigation of the passivation layer was discussed in this manuscript.