Abstract
Thin films of CeO 2 have been grown on single crystal silicon wafers using pulsed laser deposition. X-ray diffraction was used to examine the effect of deposition parameters such as oxygen partial pressure and substrate temperature. The effect of laser fluence on deposition rate and surface morphology is also presented. The best results were obtained for films deposited at low oxygen partial pressures and high substrate temperatures, from a pre-ablated target using a laser fluence higher than 2 J cm −2. The growth of multilayers with increasing lattice constants is demonstrated by depositing a CeO 2 layer doped with La over an indoped film, X-ray diffraction and lattice imaging in a transmission electron microscope were used to characterise the films.
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