Abstract
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.
Highlights
GeSn alloys offer promising optical advantages compared to traditional group-IV semiconductor materials such as Si and Ge [1,2,3]
With sufficiently high Sn composition, the true direct bandgap GeSn has led to the successful demonstration of optically pumped and electrically injected GeSn lasers [4,5,6,7,8]
We demonstrate the growth of a GeSn alloy with Sn composition of
Summary
GeSn alloys offer promising optical advantages compared to traditional group-IV semiconductor materials such as Si and Ge [1,2,3]. The tunable bandgap covering broad nearand mid-infrared wavelength enables the development of light emitter and detectors towards Si-based longwave integrated optoelectronics (LIO) applications [9,10,11,12]. GeSn-based devices to be monolithically integrated on Si substrates [13,14,15]. Growth of GeSn alloys on Si substrate is difficult because of the low solubility (
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
