Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

Joshua Grant,Wei Du,Emmanuel Wanglia,Abbas Sabbar,Solomon Ojo,Oluwatobi Olorunsola,Sylvester Amoah,Murtadha Alher,Samir K Saha,Shui-Qing Yu,Grey Abernathy,Bao-Hua Li

doi:10.3390/ma14247637

Joshua Grant, Wei Du + Show 10 more

Open Access

https://doi.org/10.3390/ma14247637

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Abstract

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.

Highlights

GeSn alloys offer promising optical advantages compared to traditional group-IV semiconductor materials such as Si and Ge [1,2,3]
With sufficiently high Sn composition, the true direct bandgap GeSn has led to the successful demonstration of optically pumped and electrically injected GeSn lasers [4,5,6,7,8]
We demonstrate the growth of a GeSn alloy with Sn composition of

Summary

Introduction

GeSn alloys offer promising optical advantages compared to traditional group-IV semiconductor materials such as Si and Ge [1,2,3]. The tunable bandgap covering broad nearand mid-infrared wavelength enables the development of light emitter and detectors towards Si-based longwave integrated optoelectronics (LIO) applications [9,10,11,12]. GeSn-based devices to be monolithically integrated on Si substrates [13,14,15]. Growth of GeSn alloys on Si substrate is difficult because of the low solubility (

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Conclusion