Growth of polycrystalline CuInSe2 thin films by effusion evaporation

Abstract

The condensation process for thin polycrystalline CuInSe2 films has been studied via effusion evaporation of the ternary substance in the Se-enriched and Se-free vapour phases. The film growth is shown to be in good agreement with a model of small nuclei. The temperature of the critical nucleus formation has been determined: p-type films generally grow at higher temperatures than n-type films. The authors discuss the influence of technological parameters on a point defect ensemble in the prepared films, resulting in a wide variation of their electrical and optical properties.