Abstract
We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate. With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back gate voltage. Our proposed multi-layered structure is suitable for surface-sensitive measurements of the voltage-induced change in anisotropy, and could be used to realize flexible spintronics devices.
Highlights
The development of a Magnetic Random Access Memory (MRAM) is moving toward to a new technique for low power consumption operation
We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate
With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back gate voltage
Summary
The development of a Magnetic Random Access Memory (MRAM) is moving toward to a new technique for low power consumption operation. The control of magnetism by electric fields has emerged as a promising method to switch the magnetization direction in magnetic thin films without applying an electric current in principle. The first observation of voltage-change of magnetic anisotropy (VCMA) in ferromagnetic metals has been reported by M. Weisheit et al.[1] in 2007 by using FePt and FePd immersed in a liquid electrolyte. T. Maruyama et al.[2] observed the voltage effect in solid state Fe|MgO thin films. The VCMA in magnetic tunnel junction led to the demonstrations of voltage-driven dynamic switching,[3,4] ferromagnetic resonance[5] and assisted switching.[6]
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