Abstract
ABSTRACTThe main challenges involved in the growth of an epitaxial oxide film with a crystalline interface to silicon are reviewed: (1) structural matching of the oxide and semiconductor lattices; (2) thermodynamic energy stabilization at the semiconductor–oxide interface, and (3) kinetic control over oxygen motion throughout the deposition process. We report on how this approach can be used to grow epitaxial perovskites of high structural quality from the (Ba, Sr)(Zr,Ti)O3 family with crystalline interfaces on Si (100) by molecular-beam epitaxy.
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