Abstract
A series of high quality La–Ca–Mn–O, La–Nd–Sr–Mn–O and La–Sr–Mn–Fe–O films have been grown on Si(100) substrates. Their electrical and magnetic properties are strongly dependent on the preparation conditions. Large GMR values, of 70% (Δ ρ/ ρ o) at 300 K under a magnetic field of 4.7 T have been achieved in La 0.60Sr 0.40Mn 0.90Fe 0.10O 3. The effect of trivalent ions and B-site (Fe) doping on the magnetoresistive properties of these perovskite manganese oxides is also investigated. The maximum resistivity temperature increases with La doping in the La 0.6− x Nd x Sr 0.40MnO 3 system and decreases with Fe doping in La 0.60Sr 0.40Mn 1− x Fe x O 3 films. Our results suggest that lattice distortion associated with the changes in the Mn–Mn electronic hopping parameter as well as Jahn–Teller distortion can explain the observed results.
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