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Abstract
Structures comprising Si-Si1−x Gex-(Ge2)1−x (InP)x with an intermediate Si1−x Gex buffer layer were grown on silicon substrates. Morphological examinations, scanning patterns and diffraction spectra, and also the electrophysical and luminescence properties of the heterostructures were used to show that the crystal perfection of these structures depends on the choice of liquid-phase epitaxy conditions.
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