Abstract
This paper describes metalorganic molecular beam epitaxy (MOMBE) of p-type ZnSe using metal zinc, pre-cracked metalorganic dimethylselenide, and microwave-excited nitrogen plasma as sources. Optical, structural, and electrical properties of the p-type ZnSe layers have been investigated. At present, maximum net acceptor concentration Na-Nd is 3 x 1017 cm-3 without any post-growth annealing. This is the highest acceptor concentration ever reported for MOMBEgrown p-type ZnSe doped with nitrogen plasma, but photoluminescence and deep level transient spectroscopy suggest that acceptors are highly compensated and the reduction of compensating defects is a key to further increase the acceptor concentration.
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