Abstract
Discussions are given of key issues for p-type doping of Zn(S)Se by MOVPE, with emphasis on low-temperature growth and purity problems of precursors. We utilized two of the most conventionally commercialized precursors, DEZn and DMSe, with the photoassisted technique for low-temperature growth and post-growth thermal annealing to eliminate hydrogen passivation, because the purity of these precursors are now fairly satisfactory if appropriate batches of high purity are carefully chosen. However, the purity problems seem to remain in the S and N precursors we used (DiPS and tBuNH 2, respectively). With the high-purity source combination, optimum-growth conditions can be chosen from a wide variety of growth parameters without being affected by impurities in the precursors. Thermal annealing techniques and conditions are discussed so that the annealing can maximize the acceptor activation while minimizing the thermal damage, and at present annealing at 450°C with a SiO 2 capping layer is found to be effective for high-quality p-type layers.
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