Abstract
Oriented hBN films with their (0 0 0 2) basal plane lying on Si (1 0 0) substrate were prepared by electron cyclotron resonance chemical vapour deposition technique. Fourier transform infrared spectroscopy (FTIR) measurement shows that in this case the absorption peak of the B–N–B out-of-plane mode disappeared. X-ray diffraction result confines the orientation. The morphology by atomic force microscopy is also shown.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.