Abstract
Metal-organic chemical vapor deposition was successfully used to grow un-doped nonpolar a-plane AlGaN on an r-plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic force microscopy, Polarization Indirect Microscopic Imaging, and Hall effect measurement were used to investigate the effect of the nonpolar a-plane AlGaN layer on the graded AlGaN buffer layer. The results reveal that inserting the AlGaN-graded layer improves the crystalline quality and morphology of the surface. The root means the square value was less than 1.47 nm, while the background electron concentration was In addition, the HR-XRD full width at half maximum indicates improved crystalline quality.
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